Study of the Ultrathin Ferroelectric BaTiO3 Film using Scanning Transmission Electron Microscopy
نویسندگان
چکیده
Ferroelectric materials can be used for the ferroelectric random access memory (FeRAM) For the miniaturization the thin film structures are used in general. However, there is the critical thickness of ferroelectric materials, below which ferroelectricity abruptly disappears. Besides, the depolarization field, the epitaxial strain, the termination of the ferroelectric film, and the electric filed affect the ferroelectric properties.
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تاریخ انتشار 2014